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NTE296 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE296
Description  Silicon PNP Transistor General Purpose Amplifier
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE296 Datasheet(HTML) 1 Page - NTE Electronics

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NTE296
Silicon PNP Transistor
General Purpose Amplifier
Description:
The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applica-
tions requiring high breakdown voltages, low saturation voltages and low capacitance.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA = +25°C), PD
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
16mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
80mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA
62.5
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC
12.5
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 1
300
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
300
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
V
Collector Cutoff Current
ICBO
VCB = 200V, IE = 0
0.2
µA
Emitter Cutoff Current
IEBO
VBE = 3V, IC = 0
0.1
µA


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