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HI80P20C110MJ Datasheet(PDF) 4 Page - Token Electronics Industry Co., Ltd. |
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HI80P20C110MJ Datasheet(HTML) 4 Page - Token Electronics Industry Co., Ltd. |
4 / 12 page http://www.token.com.tw rfq@token.com.tw Taiwan Factory: +886 2 29810109 China Factory: +86 755 26055363 Page: 3/11 HI80DS Spec. Conventional Miniature High Voltage Resistor Construction (HI80DS) Membrane Material (a) Ruthenium Paste Base Material (b) 95% Aluminum Oxide, Al2O3 Encapsulating Material (c) High Temperature Silicone Resin Conventional Miniature Specifications & Painted Dimensions (Unit: mm) (HI80DS) Part Number Rated power (W) Ambient temperature (75℃) Max. continuous Oper. Volt (KV) Resistance range (Ω) Dimensions (mm) Min. Max. L ±0.5mm E ±3mm D ±0.5mm d ±0.1mm HI80DS-20 3 4.8 200 1G 20.2 30 8.2 1.0 HI80DS-26 5 6.4 250 1G 26.9 30 8.2 1.0 HI80DS-32 7 8.0 300 1.5G 33.0 30 8.2 1.0 HI80DS-39 9 12.8 400 1.5G 39.5 30 8.2 1.0 HI80DS-52 10 16 500 2.5G 52.1 30 8.2 1.0 HI80DS-78 15 24 900 4G 77.7 30 8.2 1.0 HI80DS-103 20 32 1K2 6G 102.9 30 8.2 1.0 HI80DS-124 25 40 1K5 8G 123.7 30 8.2 1.0 HI80DS-154 30 45 2K 10G 153.7 30 8.2 1.0 Conventional Miniature Specifications & Painted Dimensions (Unit: mm) - (HI80DS) |
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