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OP236TXV Datasheet(PDF) 2 Page - TT Electronics. |
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OP236TXV Datasheet(HTML) 2 Page - TT Electronics. |
2 / 3 page High Reliability Hermetic Infrared Emitting Diode © TT electronics plc Issue A 11/2016 Page 2 TT Electronics | Optek Technology, Inc. 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -65 o C to +150o C Operating Temperature Range -55 o C to +125o C Reverse Voltage 2.0 V Forward DC Current 100 mA Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C (1) Power Dissipation 200 mW (2) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS EE(APT) Apertured Radiant Incidence OP235 (TX, TXV) OP236 (TX, TXV) 1.5 3.5 - - - - mW/cm 2 IF = 100 mA VF Forward Voltage 1.1 1.3 0.9 - - - 2.0 2.2 1.8 V IF = 100 mA IF = 100 mA, TA = -55° C IF = 100 mA, TA = 100° C IR Reverse Current - - 100 µA VR= 2.0 V λP Wavelength at Peak Emission - 890 - nm IF = 100 mA β Spectral Bandwidth between Half Power Points - 50 - nm IF = 100 mA θHP Emission Angle at Half Power Points - 18 - Degree IF = 100 mA Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.00 mW/° C above 25° C. 3. EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. EE(APT) is not necessarily uniform within the measured area. |
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