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SVA-541-DP+ Datasheet(PDF) 3 Page - Mini-Circuits

Part # SVA-541-DP+
Description  E-PHEMT Die
Download  5 Pages
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Manufacturer  MINI [Mini-Circuits]
Direct Link  http://www.minicircuits.com
Logo MINI - Mini-Circuits

SVA-541-DP+ Datasheet(HTML) 3 Page - Mini-Circuits

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E-PHEMT Die
SAV-541-D+
Page 3 of 5
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Characterization Test Circuit
Die Layout
Critical Dimensions
Parameter
Values
Die Thickness, µm
100
Die Width, µm
400
Die Length, µm
400
Bond Pad Size, µm
75 x 75
Fig 3. Bonding Pad Positions
Bonding Pad Position
(Dimensions in µm, Typical)
Fig 2. Die Layout
Figure 1: Transistor Die Probe RF Reference Plane
Figure 2: SAV-541-D+ Die Diagram
TEST METHOD: RF Probe using MPI Titan Series 100um pitch GSG probe
Gate
Source
Source
Drain
Source
Source
RF Reference Plane
GATE
(RF-IN)
DRAIN
(RF-OUT)
SOURCE
(Ground)
SOURCE
(Ground)
SOURCE
(Ground)
SOURCE
(Ground)
Fig 1. Block Diagram of Test Circuit used.
Gain, Return loss, Output Power at 1dB compression (P1dB), Output IP3 (OIP3) and Noise figure measured using Agilent’s
N5242A PNA-X Microwave network analyzer.
Conditions:
1. Drain voltage (with reference to source, VDS)=3 or 4V as shown.
2. Gain voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown.
3. Gain:Pin=-25 dBm
4. Output IP3 (OIP3)= two tones spaced 1 MHz apart. 0 dBm/tone at output.
5. No external matching components used.


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