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2SB1386-P Datasheet(PDF) 1 Page - Micro Commercial Components |
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2SB1386-P Datasheet(HTML) 1 Page - Micro Commercial Components |
1 / 4 page 2SB1386-P PNP Silicon Epitaxial Transistors Features Low Collector Saturation Voltage Execllent current-to-gain characteristics Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage -20 V VCBO Collector-Base Voltage -30 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current -5.0 A PC Collector power dissipation 0.5 W TJ Junction Temperature 150 TSTG Storage Temperature -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Typ Max Units V(BR)CBO Collector-base Breakdown Voltage (IC=-50 µAdc, I E=0) -30 --- --- Vdc ICBO Collector-Base Cutoff Current (VCB=-20Vdc,IE=0) --- --- -0.5 µAdc IEBO Emitter-Base Cutoff Current (VEB=-5Vdc, IC=0) --- --- -0.5 µAdc hFE(1) DC Current Gain (IC=-0.5Adc, VCE=-2.0Vdc) 82 --- 390 --- VCE(sat) Collector-Emitter Saturation Voltage (IC=-4Adc, IB=-0.1Adc) --- --- -1.0 Vdc fT Transition Frequency (VCE=-6Vdc, IC=-50mAdc,f=30MHz) 120 --- MHz Cob Collector output capacitance (VCB=-20Vdc, IE=0,f=1.0MHz) --- 60 --- pF Revision: C 2013/09/05 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC SOT-89 1. Emitter 2. Collector 3. Base TM Micro Commercial Components CLASSIFICATION OF HFE(1) Rank P Q R Range 82-180 Marking BHP 120-270 180-390 BHQ BHR www.mccsemi.com 1 of 4 2SB1386-Q 2SB1386-R V(BR)CEO Collector-Emitter Breakdown Voltage (IC=-1mAdc, IB=0) -20 --- --- Vdc V(BR)EBO Emitter-base Breakdown Voltage (IE=-50 µAdc, I C=0) -6 --- --- Vdc B A E D G H F K J C 1 2 3 25 1.55 .061 REF. • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" • ICp Pulsed Collector Current -10 A |
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