Si840x

4

Rev. 1.6

1. Electrical Specifications

Table 1. Absolute Maximum Ratings1

Parameter

Symbol

Min

Typ

Max

Unit

Storage Temperature2

–65

—

150

°C

Ambient Temperature Under Bias

–40

—

125

°C

Supply Voltage (Revision A)3

–0.5

—

5.75

V

Supply Voltage (Revision B)3

–0.5

—

6.0

V

Input Voltage

–0.5

—

V

Output Voltage

–0.5

—

V

——

±10

mA

——

±15

mA

——

±75

mA

Lead Solder Temperature (10 s)

—

—

260

°C

Maximum Isolation Voltage (1 s)

—

—

3600

Notes:

1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be

restricted to conditions as specified in the operational sections of this data sheet.

2. VDE certifies storage temperature from –40 to 150 °C.

3. See "7.Ordering Guide" on page 25 for more information.

Table 2. Si840x Power Characteristics*

3.0 V < VDD < 5.5 V. TA = –40 to +125 °C. Typical specs at 25 °C (See Figures 2 and 16 for test diagrams.)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Si8400/01/02 Supply Current

AVDD current

BVDD current

Idda

Iddb

All channels = 0 dc

—

—

4.2

3.9

6.3

5.9

mA

mA

AVDD current

BVDD current

Idda

Iddb

All channels = 1 dc

—

—

2.3

1.9

3.5

2.9

mA

mA

AVDD current

BVDD current

Idda

Iddb

All channels = 1.7 MHz

—

—

3.2

2.9

4.8

4.4

mA

mA

Si8405 Supply Current

AVDD current

BVDD current

Idda

Iddb

—

—

3.2

2.9

4.8

4.4

mA

mA

AVDD current

BVDD current

Idda

Iddb

—

—

6.2

6.0

9.3

9.0

mA

mA

AVDD current

BVDD current

Idda

Iddb

—

—

4.7

4.5

7.1

6.8

mA

mA

*Note: All voltages are relative to respective ground.