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DMT10H010LSS Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMT10H010LSS
Description  100V N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMT10H010LSS Datasheet(HTML) 4 Page - Diodes Incorporated

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DMT10H010LSS
Document number: DS38035 Rev.6 - 2
4 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMT10H010LSS
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D=250μA
I
D=1mA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
V
GS=0V, TJ=-55℃
V
GS=0V, TJ=25℃
V
GS=0V, TJ=85℃
V
GS=0V, TJ=175℃
V
GS=0V, TJ=150℃
V
GS=0V, TJ=125℃
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Area
T
= 150°C
J (m ax )
T = 25°C
A
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
RDS(on)
Limited
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 6V, ID = 13A
V
GS = 4.5V, ID = 5A
V
GS = 10V, ID = 13A
1
10
100
1000
10000
0
20
40
60
80
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
10
0
10
20
30
40
50
60
Qg (nC)
Figure 11. Gate Charge
V
DS = 50V, ID = 13A


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