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NTE2945 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE2945 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 3 page  NTE2945 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability D TO220 Type Isolated Package Absolute Maximum Ratings: Drain–Source Voltage (Note 1), VDSS 400V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR 400V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate–Source Voltage, VGS ±20V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain Current, ID Continuous TC = +25°C 5.5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC = +100°C 3.9A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed (Note 2) 40A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current (Pulsed), IGM ±1.5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Energy (Note 3), EAS 157mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Avalanche Current, IAS 5.5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TC = +25°C), PD 40W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25 °C 0.32W/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature Range, TJ –55 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –55 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL +300 °C . . . . . . . . . . . . . . Thermal Resistance: Maximum Junction–to–Case, RthJC 3.12K/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS 0.5K/W . . . . . . . Maximum Junction–to–Ambient (Free Air Operation), RthJA 62.5K/W . . . . . . . . . . . . . . . . . . . . Note 1. TJ = +25° to +150°C. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 9.1mH, VDD = 50V, RG = 25Ω, Starting TJ = +25°C. |
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