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SUD50P04-13L Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUD50P04-13L
Description  P-Channel 40-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50P04-13L Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUD50P04-13L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73009
S-41267—Rev. A, 05-Jul-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−40
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1.0
−3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −40 V, VGS = 0 V
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = −40 V, VGS = 0 V, TJ = 125_C
−50
mA
On-State Drain Currenta
ID(on)
VDS = −5 V, VGS = −10 V
−50
A
VGS = −10 V, ID = −30 A
0.0105
0.013
Drain-Source On-State Resistancea
rDS(on)
VGS = −10 V, ID = −30 A, TJ = 125_C
0.020
W
DS(on)
VGS = −4.5 V, ID = −20 A
0.017
0.022
Forward Transconductancea
gfs
VDS = −15 V, ID = −30 A
15
S
Dynamicb
Input Capacitance
Ciss
3120
Output Capacitance
Coss
VGS = 0 V, VDS = −25 V, f = 1 MHz
440
pF
Reverse Transfer Capacitance
Crss
GS
, DS
,
320
Gate Resistance
Rg
f = 1.0 MHz
4.3
W
Total Gate Chargec
Qg
63
95
Gate-Source Chargec
Qgs
VDS = −20 V, VGS = −10 V, ID = −50 A
13
nC
Gate-Drain Chargec
Qgd
DS
, GS
, D
16
Turn-On Delay Timec
td(on)
15
25
Rise Timec
tr
VDD = −20 V, RL = 0.4 W
18
30
ns
Turn-Off Delay Timec
td(off)
VDD = −20 V, RL = 0.4 W
ID ^ −50 A, VGEN = −10 V, Rg = 2.5 W
60
90
ns
Fall Timec
tf
47
70
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
−100
A
Diode Forward Voltagea
VSD
IF = −50 A, VGS = 0 V
−1.0
−1.5
V
Source-Drain Reverse Recovery Time
trr
IF = −50 A, di/dt = 100 A/ms
36
55
ns
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.


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