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SUD50P04-13L Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUD50P04-13L
Description  P-Channel 40-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50P04-13L Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
APPLICATIONS
D Automotive Such As:
− High-Side Switch
− Motor Drive
− 12-V Boardnet
SUD50P04-13L
Vishay Siliconix
New Product
Document Number: 73009
S-41267—Rev. A, 05-Jul-04
www.vishay.com
1
P-Channel 40-V (D-S), 175
_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
40
0.013 @ VGS = −10 V
−60c
−40
0.022 @ VGS = −4.5 V
−48
TO-252
S
GD
Top View
Drain Connected to Tab
Order Number:
SUD50P04-13L—E3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
−40
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Currentb
TC = 25_C
ID
−60c
Continuous Drain Currentb
TC = 100_C
ID
−43
Pulsed Drain Current
IDM
−100
A
Continuous Source Current (Diode Conduction)
IS
−60c
Avalanche Current
IAS
−40
Avalanche Energy
EAS
80
mJ
Maximum Power Dissipationb
TC = 25_C
PD
93.7b
W
Maximum Power Dissipationb
TA = 25_C
PD
3a
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambienta
t v 10 sec.
R
15
18
Maximum Junction-to-Ambienta
Steady State
RthJA
40
50
_C/W
Maximum Junction-to-Case
RthJC
1.3
1.6
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
See SOA curve for voltage derating.
c.
Calculated based on maximum allowable Junction Temperature. Package limitation current is 50 A.


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