2016-01-29

2

Version 1.5

SFH 4715

Parameter

Symbol

Values

Unit

Operation and storage temperature range

T

-40 ... 125

°C

Junction temperature

T

j

145

°C

Reverse voltage

V

R

1

V

Forward current

I

F

1000

mA

Surge current

I

FSM

5

A

Power consumption

1.8

W

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

2

kV

Thermal resistance junction - solder point

11

K / W

Note:

For the forward current and power consumption please see "maximum permissible forward current"

diagram

Parameter

Symbol

Values

Unit

Peak wavelength

(I

(typ)

λ

peak

860

nm

Centroid wavelength

(typ)

λ

centroid

850

nm

(typ)

∆λ

30

nm

Half angle

(typ)

ϕ

± 45

°

Dimensions of active chip area

(typ)

L x W

1 x 1

mm x

mm

Rise and fall times of I

(I

(typ)

t

7/14

ns

Forward voltage

(typ (max)) V

F

1.5 (≤ 1.8)

V

Forward voltage

2 (≤ 2.9)

V

Total radiant flux

(I

(typ)

630

mW