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2SK3314 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK3314
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3314 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK3314
2002-01-25
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3314
Chopper Regulator, DC−DC Converter Applications
Motor Drive Applications
l Fast reverse recovery time
: trr = 105 ns (typ.)
l Built−in high−speed free−wheeling diode
l Low drain−source ON resistance
: RDS (ON) = 0.35 Ω (typ.)
l High forward transfer admittance
: |Yfs| = 9.9 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 500 V)
l Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
500
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS
±30
V
DC
(Note 1)
ID
15
A
Drain current
Pulse (Note 1)
IDP
60
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
630
mJ
Avalanche current
IAR
15
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.76 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)


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