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2SK3314 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3314 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3314 2002-01-25 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3314 Chopper Regulator, DC−DC Converter Applications Motor Drive Applications l Fast reverse recovery time : trr = 105 ns (typ.) l Built−in high−speed free−wheeling diode l Low drain−source ON resistance : RDS (ON) = 0.35 Ω (typ.) l High forward transfer admittance : |Yfs| = 9.9 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V Gate−source voltage VGSS ±30 V DC (Note 1) ID 15 A Drain current Pulse (Note 1) IDP 60 A Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 630 mJ Avalanche current IAR 15 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.833 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.76 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) |
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