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IR2110E4 Datasheet(PDF) 1 Page - International Rectifier

Part No. IR2110E4
Description  HIGH AND LOW SIDE DRIVER
Download  14 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IR2110E4 Datasheet(HTML) 1 Page - International Rectifier

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Symbol
Parameter
Min.
Max.
Units
VB
High Side Floating Supply Absolute Voltage
-0.5
VS + 20
VS
High Side Floating Supply Offset Voltage
400
VHO
High Side Output Voltage
VS -0.5
VB + 0.5
VCC
Low Side Fixed Supply Voltage
-0.5
20
VLO
Low Side Output Voltage
-0.5
VCC + 0.5
VDD
Logic Supply Voltage
-0.5
VSS + 20
VSS
Logic Supply Offset Voltage
VCC - 20
VCC + 0.5
VIN
Logic Input Voltage (HIN, LIN & SD)
VSS - 0.5
VDD + 0.5
dVS/dt
Allowable Offset Supply Voltage Transient (Fig. 16)
50
V/ns
PD
Package Power Dissipation @ TA ≤ = 25°C (Fig. 19)
1.6
W
RthJA
Thermal Resistance, Junction to Ambient
125
°C/W
Tj
Junction Temperature
-55
125
TS
Storage Temperature
-55
150
TL
Package Mounting Surface Temperature
300 (for 5 seconds)
Weight
0.45 (typical)
g
Features
n Floating channel designed for bootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
IR2110E4
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET
400V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.)
120 & 94 ns
Delay Matching
10 ns
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissi-
pation ratings are measured under board mounted and still air conditions. Additional information is shown
in Figures 28 through 35.
Description
The IR2110E4 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side refer-
enced output channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construc-
tion.
Logic inputs are compatible with standard CMOS or
LSTTL outputs.
The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-con-
duction. Propagation delays are matched to simplify use in
high frequency applications.
The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 400 volts.
V
°C
4/19/99
www.irf.com
1
PD - 60086B


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