SI7840DP datasheet(1/4 Pages) VISHAY

Part #	SI7840DP

Description	N-Channel 30-V (D-S) Fast Switching MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKt

Package with Low 1.07-mm Profile

APPLICATIONS

D DC/DC Converters

D Optimized for “High-Side” Synchronous

Rectifier Operation

Si7840DP

Vishay Siliconix

New Product

Document Number: 71624

S-05804—Rev. C, 25-Feb-02

www.vishay.com

1

N-Channel 30-V (D-S) Fast Switching MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.0095 @ VGS = 10 V

18

30

0.014 @ VGS = 4.5 V

15

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK

t SO-8

Bottom View

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

"20

V

_

TA = 25_C

18

11

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

14

8

Pulsed Drain Current

IDM

40

A

Continuous Source Current (Diode Conduction)a

IS

4.1

1.6

Avalanche Current

IAS

40

Avalanche Energy

L = 0.1 mH

EAS

80

mJ

TA = 25_C

5.0

1.9

Maximum Power Dissipationa

TA = 70_C

PD

3.2

1.2

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 10 sec

20

25

Maximum Junction-to-Ambienta

Steady State

RthJA

52

65

_C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.1

2.6

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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