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FDQ7238S Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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FDQ7238S Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 9 page FDQ7238S Rev A1 (W) Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7238S Q2. TIME : 12nS/div Figure 12. FDQ7238S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6644). TIME : 12.5nS/div Figure 13. Non-SyncFET (FDS6644) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power dissipated in the device. 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 VDS, REVERSEVOLTAGE(V) TA=25 oC TA=100 oC TA=125 oC Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. |
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