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SI7463DP Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. SI7463DP
Description  P-Channel 40-V (D-S) MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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SI7463DP Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D Automotive
− 12-V Boardnet
− High-Side Switches
− Motor Drives
Si7463DP
Vishay Siliconix
Document Number: 72440
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
−40
0.0092 @ VGS = −10 V
−18.6
−40
0.014 @ VGS = −4.5 V
−15
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
S
G
D
P-Channel MOSFET
Ordering Information: Si7463DP-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
−40
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
−18.6
−11
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
−15
−8.9
A
Pulsed Drain Current
IDM
−60
A
continuous Source Current (Diode Conduction)a
IS
−4.5
−1.6
Maximum Power Dissipationa
TA = 25_C
PD
5.4
1.9
W
Maximum Power Dissipationa
TA = 70_C
PD
3.4
1.2
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
18
23
Maximum Junction-to-Ambienta
Steady State
RthJA
52
65
_C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.3
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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