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NTE2924 Datasheet(PDF) 2 Page - NTE Electronics

Part # NTE2924
Description  MOSFET N-Ch, Enhancement Mode High Speed Switch
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE2924 Datasheet(HTML) 2 Page - NTE Electronics

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Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain–to–Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
600
V
Breakdown Voltage Temp. Coefficient
∆V(BR)DSS
∆TJ
Reference to +25
°C, ID = 1mA
0.70
V/
°C
Static Drain–to–Source On–Resistance
RDS(on)
VGS = 10V, ID = 4.1A, Note 4
1.2
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
2.0
4.0
V
Forward Transconductance
gfs
VDS = 100V, ID = 4.1A, Note4
4.9
mhos
Drain–to–Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
100
µA
VDS = 480V, VGS = 0V, TJ = +125°C
500
µA
Gate–to–Source Forward Leakage
IGSS
VGS = 20V
100
nA
Gate–to–Source Reverse Leakage
IGSS
VGS = –20V
–100
nA
Total Gate Charge
Qg
ID = 6.2A, VDS = 360V, VGS = 10V,
60
nC
Gate–to–Source Charge
Qgs
Note 4
8.3
nC
Gate–to–Drain (“Miller”) Charge
Qgd
30
nC
Turn–On Delay Time
td(on)
VDD = 300V, ID = 6.2A, RG = 9.1Ω,
13
ns
Rise Time
tr
RD = 47Ω, Note 4
18
ns
Turn–Off Delay Time
td(off)
55
ns
Fall Time
tf
20
ns
Internal Drain Inductance
LD
Between lead, .250in. (6.0) mm from
5.0
nH
Internal Source Inductance
LS
package and center of die contact
13
nH
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
1300
pF
Output Capacitance
Coss
160
pF
Reverse Transfer Capaticance
Crss
30
pF
Source–Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current (Body Diode)
IS
6.8
A
Pulsed Source Current (Body Diode)
ISM
Note 1
27
A
Diode Forward Voltage
VSD
TJ = +25°C, IS = 6.8A, VGS = 0V,
Note 4
1.5
V
Reverse Recovery Time
trr
TJ = +25°C, IF = 6.2A,
450
940
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/
µs, Note 4
3.8
7.9
µC
Forward Turn–On Time
ton
Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width
≤ 300µs; duty cycle ≤ 2%.


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