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PNZ107 Datasheet(PDF) 2 Page - Panasonic Semiconductor

Part No. PNZ107
Description  Silicon NPN Phototransistors
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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PNZ107 Datasheet(HTML) 2 Page - Panasonic Semiconductor

   
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Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dark current
ICEO
VCE = 10V
0.05
2
µA
Collector photo current
ICE(L)
VCE = 10V, L = 100 lx*1
515
mA
Peak sensitivity wavelength
λ
P
VCE = 10V
900
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
10
deg.
Rise time
tr*2
VCC = 10V, ICE(L) = 5mA
5
µs
Fall time
tf*2
RL = 100Ω
6
µs
Collector saturation voltage
VCE(sat)
ICE(L) = 1mA, L = 500 lx*1
0.3
0.6
V
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Phototransistors
PNZ107, PNZ108
PC — Ta
200
160
120
80
40
Ambient temperature
Ta (˚C )
0
20406080
100
0
– 20
Ta = 25˚C
T = 2856K
ICE(L) — VCE
20
16
12
4
8
0
Collector to emitter voltage
V
CE (V)
020
16
812
424
ICE(L) — L
10 3
10 2
10
1
Illuminance
L (lx)
10
10 2
10 3
10 –1
1
VCE = 10V
Ta = 25˚C
T = 2856K
100 lx
50 lx
10 lx
50
RL
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
VCC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
td
tr
tf


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