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PNZ107 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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PNZ107 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO* 30 V Emitter to collector voltage VECO 3V Emitter to base voltage VEBO* 5V Collector current IC 30 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C * PNZ108 only Features High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin (PNZ0108) TO-18 standard type package PNZ107, PNZ108 (PN107, PN108) Silicon NPN Phototransistors For optical control systems Phototransistors Glass lens 1: Emitter 2: Collector Unit : mm 4.6 0.15 2.54 0.25 5.75 max. 2- 0.45 0.05 1 2 Glass lens 1: Emitter 2: Base 3: Collector Unit : mm 4.6 0.15 2.54 0.25 5.75 max. 3- 0.45 0.05 1 2 3 PNZ107 PNZ108 Note) The part numbers in the parenthesis show conventional part number. |
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