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NTE289A Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE289A
Description  Silicon Complementary Transistors Audio Power Amplifier
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE289A Datasheet(HTML) 1 Page - NTE Electronics

  NTE289A Datasheet HTML 1Page - NTE Electronics NTE289A Datasheet HTML 2Page - NTE Electronics  
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NTE289A (NPN) & NTE290A (PNP)
Silicon Complementary Transistors
Audio Power Amplifier
Features:
D High Breakdown Voltage: V(BR)CEO = 80V Min
D High Current: IC = 500mA
D Low Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current , IC
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
800mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
600mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherewise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
100
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = Open
80
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
V
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
1.0
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
1.0
µA
DC Current Gain
hFE (1)
VCE = 5V, IC = 50mA
100
200
hFE (2)
VCE = 5V, IC = 400mA (Pulse)
35
Collector–Emitter Saturation Voltage
NTE289A
VCE(sat)
IC = 400mA, IB = 40mA
0.2
0.6
V
NTE290A
0.25
0.60
V
Current–Gain Bandwidth Product
fT
VCE = 10V, IC = 10mA
120
MHz
Output Capacitance
NTE289A
Cob
VCB = 10V, f = 1MHz
5
pF
NTE290A
9
pF
Note 1. NTE289AMP is a matched pair of NTE289A with their DC Current Gain (hFE) matched to
within 10% of each other.
Note 2. NTE290AMCP is a matched complementary pair containing 1 each of NTE289A (NPN) and
NTE290A (PNP).


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