PHP63NQ03LT datasheet(2/14 Pages) PHILIPS

Part #	PHP63NQ03LT

Description	TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PHP/PHB/PHD63NQ03LT

TrenchMOS™ logic level FET

Product data

Rev. 01 — 14 June 2002

2 of 14

9397 750 09822

3.

Limiting values

Table 2:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

25

°C ≤ T

j ≤ 175 °C

-

30

V

VDGR

drain-gate voltage (DC)

25

°C ≤ T

j ≤ 175 °C; RGS =20kΩ

-30

V

VGS

gate-source voltage (DC)

-

±20

V

VGSM

peak gate-source voltage

tp ≤ 50 µs; pulsed; duty cycle = 25 %

-

±25

V

ID

drain current (DC)

Tmb =25 °C; VGS =10V; Figure 2 and 3

-

68.9

A

Tmb = 100 °C; VGS =10V; Figure 2

-

48.7

A

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3

-

240

A

Ptot

total power dissipation

Tmb =25 °C; Figure 1

-

111

W

Tstg

storage temperature

−55

+175

°C

Tj

junction temperature

−55

+175

°C

Source-drain diode

IS

source (diode forward) current (DC)

Tmb =25 °C

-

68.9

A

ISM

peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 µs

-

48.7

A

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