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NTE278 Datasheet(PDF) 2 Page - NTE Electronics

Part # NTE278
Description  Silicon NPN Transistor Broadband RF Amp
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE278 Datasheet(HTML) 2 Page - NTE Electronics

  NTE278 Datasheet HTML 1Page - NTE Electronics NTE278 Datasheet HTML 2Page - NTE Electronics  
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
hFE
IC = 360mA, VCE = 5V
5
–
–
IC = 50mA, VCE = 15V
40
–
120
Dynamic Characteristics
Current–Gain Bandwidth Product
fT
IC = 50mA, VCE = 15V, f = 200MHz
1200
–
–
MHz
Collector–Base Capacitance
Ccb
VCB = 15V, IE = 0, f = 1MHz
–
1.8
3.5
pF
Noise Figure
NF
IC = 10mA, VCE = 15V, f = 200MHz
–
3
–
dB
Functional Test
Common–Emitter Amplifier Voltage
Gain
Gve
IC = 50mA, VCC = 15V, f = 50 to 216MHz
11
–
–
dB
Power Input
Pin
IC = 50mA, VCC = 15V, RS = 50Ω,
Pout = 1.26mW, f = 200MHz
–
–
0.1
mW
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
45
°
.031 (.793)
Emitter
Base
Collector/Case
.018 (0.45)


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