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DMP3165L-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3165L-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMP3165L Document number: DS40415 Rev. 2 - 2 2 of 7 www.diodes.com February 2018 © Diodes Incorporated DMP3165L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -3.3 -2.7 A Pulsed Drain Current (380 μs Pulse, Duty Cycle = 1%) IDM -13 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.8 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 159 °C/W Total Power Dissipation (Note 6) PD 1.3 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 98 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -800 nA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS ±80 ±800 nA VGS = ±12V, VDS = 0V VGS = ±15V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1.3 -2.1 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 59 100 90 134 m Ω VGS = -10V, ID = -2.7A VGS = -4.5V, ID = -2.0A Diode Forward Voltage VSD -0.83 -1.26 V VGS = 0V, IS = -2.7A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 300 pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss 52 pF Reverse Transfer Capacitance Crss 35 pF Gate Resistance RG 12.5 Ω VGS = 0V, VDS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg 1.0 nC VGS = -10V/-4.5V, VDS = -15V, ID = -3A Total Gate Charge (VGS = -10V) Qg 2.0 nC Gate-Source Charge Qgs 0.2 nC Gate-Drain Charge Qgd 0.5 nC Turn-On Delay Time tD(ON) 3.7 ns VDS = -15V, VGS = -10V, RG = 6Ω, ID = -1A Turn-On Rise Time tR 5.5 ns Turn-Off Delay Time tD(OFF) 13.6 ns Turn-Off Fall Time tF 8.4 ns Reverse Recovery Time tRR — 6.5 — ns IF = -1.0A, di/dt = 100A/μs Reverse Recovery Charge QRR — 1.2 — nC IF = -1.0A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMP3165L-13 |
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