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DMP3036SFV-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3036SFV-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMP3036SFV Document number: DS39695 Rev. 3 - 2 2 of 7 www.diodes.com December 2017 © Diodes Incorporated DMP3036SFV Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current, VGS = -10V (Note 6) TA = +25°C TA = +70°C ID -8.7 -7.0 A Continuous Drain Current, VGS = -10V (Note 7) TC = +25°C TC = +70°C ID -30 -25 A Maximum Continuous Body Diode Forward Current (Note 7) IS -3.6 A Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) IDM -80 A Avalanche Current, L = 0.3mH (Note 8) IAS -17.5 A Avalanche Energy, L = 0.3mH (Note 8) EAS 64 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.9 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 137 °C/W Total Power Dissipation (Note 6) PD 2.3 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 55 °C/W Thermal Resistance, Junction to Case (Note 7) RJC 3.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) -1.0 — -2.5 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) — — 20 m Ω VGS = -10V, ID = -8A — — 29 VGS = -5V, ID = -5A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 1931 — pF VDS = -15V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 226 — Reverse Transfer Capacitance Crss — 168 — Gate Resistance RG — 11 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -5V) Qg — 8.8 — nC VDS = -15V, ID = -10A Total Gate Charge (VGS = -10V) Qg — 16.5 — Gate-Source Charge Qgs — 2.6 — Gate-Drain Charge Qgd — 3.6 — Turn-On Delay Time tD(ON) — 8.2 — ns VDD = -15V, VGS = -10V, RGEN = 3Ω, ID = -10A Turn-On Rise Time tR — 14 — Turn-Off Delay Time tD(OFF) — 65 — Turn-Off Fall Time tF — 31.6 — Reverse Recovery Time tRR — 9.3 — ns IF = -8A, di/dt = 500A/µs Reverse Recovery Charge QRR — 12.2 — nC Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. |
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Similar Description - DMP3036SFV-13 |
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