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DMP3026SFDE-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3026SFDE-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMP3026SFDE Document number: DS38679 Rev. 1 - 2 2 of 6 www.diodes.com August 2016 © Diodes Incorporated DMP3026SFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -8.7 -6.9 A t<10s TA = +25°C TA = +70°C ID -10.4 -8.4 A Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM -50 A Continuous Source-Drain Diode Current (Note 6) TA = +25°C IS -2.0 A Avalanche Current (Note 7) L = 0.1mH IAS -23 A Avalanche Energy (Note 7) L = 0.1mH EAS 27 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.72 W TA = +70°C 0.46 Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 175 °C/W t<10s 121 Total Power Dissipation (Note 6) TA = +25°C PD 2.0 W TA = +70°C 1.3 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 61 °C/W t<10s 42 Thermal Resistance, Junction to Case (Note 6) Steady state RJC 9.3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 µA VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current TJ = +150°C (Note 9) — — -100 Gate-Source Leakage IGSS — — ±10 µA VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1 — -3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 15 19 m Ω VGS = -10V, ID = -4.5A 28 45 VGS = -4.5V, ID = -3.5A 34 54 VGS = -4.0V, ID = -3.0A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 1,204 — pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 154 — Reverse Transfer Capacitance Crss — 112 — Gate Resistance Rg — 16 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -10V) Qg — 19.6 — nC VDS = -15V, ID = -9.5A Total Gate Charge (VGS = -4.5V) Qg — 9.2 — Gate-Source Charge Qgs — 4.3 — Gate-Drain Charge Qgd — 3.9 — Turn-On Delay Time tD(on) — 5.3 — ns VDS = -15V, VGS = -10V, RG = 6Ω, ID = -9.5A Turn-On Rise Time tr — 23 — Turn-Off Delay Time tD(off) — 34 — Turn-Off Fall Time tf — 26 — Reverse Recovery Time trr — 10 — ns IF = -9.5A, di/dt = 100A/μs Reverse Recovery Charge Qrr — 3.3 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMP3026SFDE-7 |
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Similar Description - DMP3026SFDE-7 |
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