DMP45H21DHE

Document Number DS38632 Rev. 3 - 2

4 of 7

www.diodes.com

September 2017

© Diodes Incorporated

DMP45H21DHE

0

5

10

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25

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35

-50

-25

0

25

50

75

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125

150

Figure 7. On-Resistance Variation with Temperature

V

0

0.2

0.4

0.6

0.8

1

0

0.3

0.6

0.9

1.2

1.5

Figure 9. Diode Forward Voltage vs. Current

T

T

T

T

V

T

0.01

0.1

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10000

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V

Figure 10. Typical Drain-Source Leakge Current vs. Voltage

25

℃

125

℃

85

℃

150

℃

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6

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10

0

0.5

1

1.5

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2.5

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3.5

4

4.5

Qg - (nC)

Figure 12. Gate Charge

V

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6

-50

-25

0

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125

150

Figure 8. Gate Threshold Variation vs.

AmbientTemperature

I

I

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10000

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Figure11. Typical Junction Capacitance

f=1MHz

C

rss

C

oss

C

iss