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NCV887102D1R2G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCV887102D1R2G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 17 page NCV8871 www.onsemi.com 5 ELECTRICAL CHARACTERISTICS (−40 °C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are guaranteed by test, design or statistical correlation. Characteristic Unit Max Typ Min Conditions Symbol CURRENT SENSE AMPLIFIER Current limit threshold voltage Vcl Voltage on ISNS pin NCV887100 NCV887101 NCV887102 NCV887103 NCV887104 360 360 360 180 180 400 400 400 200 200 440 440 440 220 220 mV Current limit, Response time tcl CL tripped until GDRV falling edge, VISNS = Vcl(typ) + 60 mV − 80 125 ns Overcurrent protection, Threshold voltage %Vocp Percent of Vcl 125 150 175 % Overcurrent protection, Response Time tocp From overcurrent event, Until switching stops, VISNS = VOCP + 40 mV − − 125 ns VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER Transconductance gm,vea VFB – Vref = ± 20 mV 0.8 1.2 1.63 mS VEA output resistance Ro,vea 2.0 − − M W VFB input bias current Ivfb,bias Current out of VFB pin − 0.5 2.0 mA Reference voltage Vref 1.176 1.200 1.224 V VEA maximum output voltage Vc,max 2.5 − − V VEA minimum output voltage Vc,min − − 0.3 V VEA sourcing current Isrc,vea VEA output current, Vc = 2.0 V 80 100 − mA VEA sinking current Isnk,vea VEA output current, Vc = 0.7 V 80 100 − mA GATE DRIVER Sourcing current Isrc VDRV ≥ 6 V, VDRV − VGDRV = 2 V NCV887100 NCV887101 NCV887102 NCV887103 NCV887104 600 400 600 400 600 800 575 800 575 800 − − − − − mA Sinking current Isink VGDRV ≥ 2 V NCV887100 NCV887101 NCV887102 NCV887103 NCV887104 500 250 500 250 500 600 350 600 350 600 − − − − − mA Driving voltage dropout Vdrv,do VIN − VDRV, IvDRV = 25 mA − 0.3 0.6 V Driving voltage source current Idrv VIN − VDRV = 1 V 35 45 − mA Backdrive diode voltage drop Vd,bd VDRV − VIN, Id,bd = 5 mA − − 0.7 V Driving voltage VDRV IVDRV = 0.1 − 25 mA NCV887100 NCV887101 NCV887102 NCV887103 NCV887104 10 6.0 6.0 8.0 8.0 10.5 6.3 6.3 8.4 8.4 11 6.6 6.6 8.8 8.8 V UVLO Undervoltage lock−out, Threshold voltage Vuvlo VIN falling 3.0 3.1 3.2 V Undervoltage lock−out, Hysteresis Vuvlo,hys VIN rising 50 125 200 mV |
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