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NCV887001D1R2G Datasheet(PDF) 4 Page - ON Semiconductor

Part # NCV887001D1R2G
Description  Automotive Grade Non-Synchronous Boost Controller
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV887001D1R2G Datasheet(HTML) 4 Page - ON Semiconductor

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NCV8870
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ELECTRICAL CHARACTERISTICS (continued)
(−40
°C<TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are guaranteed by test, design or statistical correlation.
Characteristic
Unit
Max
Typ
Min
Conditions
Symbol
ENABLE/SYNCHRONIZATION
EN/SYNC Pull-down Current
IEN/SYNC
VEN/SYNC = 5 V
5.0
10
mA
EN/SYNC Input High Voltage
Vs,ih
VIN > VUVLO
2.0
5.0
V
EN/SYNC Input Low Voltage
Vs,il
0
800
mV
EN/SYNC Time-out Ratio
%ten
From SYNC falling edge, to oscillator con-
trol (EN high) or shutdown (EN low), Per-
cent of typical switching period
350
%
SYNC Minimum Frequency Ratio
%fsync,min
Percent of fs
80
%
SYNC Maximum Frequency
fsync,max
1.1
MHz
Synchronization Delay
ts,dly
From SYNC falling edge to GDRV falling
edge under open loop conditions
50
100
ns
Synchronization Duty Cycle
Dsync
25
75
%
CURRENT SENSE AMPLIFIER
Low-frequency Gain
Acsa
Input-to-output gain at dc, ISNS
≤ 1 V
0.9
1.0
1.1
V/V
Bandwidth
BWcsa
Gain of Acsa − 3 dB
2.5
MHz
ISNS Input Bias Current
Isns,bias
Out of ISNS pin
30
50
mA
Current Limit Threshold Voltage
Vcl
Voltage on ISNS pin
NCV887000
NCV887001
360
360
400
400
440
440
mV
Current Limit,
Response Time
tcl
CL tripped until GDRV falling edge,
VISNS = Vcl(typ) + 60 mV
80
125
ns
Overcurrent Protection,
Threshold Voltage
%Vocp
Percent of Vcl
125
150
175
%
Overcurrent Protection,
Response Time
tocp
From overcurrent event, Until switching
stops, VISNS = VOCP + 40 mV
80
125
ns
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
gm,vea
VFB – Vref = ±20 mV
0.8
1.2
1.63
mS
VEA Output Resistance
Ro,vea
2.0
M
W
VFB Input Bias Current
Ivfb,bias
Current out of VFB pin
0.5
2.0
mA
Reference Voltage
Vref
1.176
1.200
1.224
V
VEA Maximum Output Voltage
Vc,max
2.5
V
VEA Minimum Output Voltage
Vc,min
0.3
V
VEA Sourcing Current
Isrc,vea
VEA output current, Vc = 2.0 V
80
100
mA
VEA Sinking Current
Isnk,vea
VEA output current, Vc = 0.7 V
80
100
mA
GATE DRIVER
Sourcing Current
Isrc
VDRV ≥ 6 V, VDRV − VGDRV = 2 V
NCV887000
NCV887001
600
600
800
800
mA
Sinking Current
Isink
VGDRV ≥ 2 V
NCV887000
NCV887001
500
500
600
600
mA
Driving Voltage Dropout
Vdrv,do
VIN − VDRV, IvDRV = 10 mA
0.2
0.35
V
Driving Voltage Source Current
Idrv
VIN − VDRV = 1 V
10
15
mA
Backdrive Diode Voltage Drop
Vd,bd
VDRV − VIN, Id,bd = 5 mA
0.7
V
Driving Voltage
VDRV
IVDRV = 0.1 − 25 mA
NCV887000
NCV887001
10
10
10.5
10.5
11
11
V


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