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ALD212900 Datasheet(PDF) 1 Page - Advanced Linear Devices |
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ALD212900 Datasheet(HTML) 1 Page - Advanced Linear Devices |
1 / 12 page ©2017 Advanced Linear Devices, Inc., Vers. 1.2 www.aldinc.com 1 of 12 e EPAD TM ® N A B L E D E ADVANCED LINEAR DEVICES, INC. GENERAL DESCRIPTION The ALD212900A/ALD212900 precision N-Channel EPAD ® MOSFET array is precision matched at the factory using ALD’s proven EPAD ® CMOS technology. These dual monolithic devices are enhanced additions to the ALD110900A/ ALD110900 EPAD ® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD212900A/ ALD212900 features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been successfully built with these devices. ALD212900A EPAD MOSFETs feature exceptional matched pair device electri- cal characteristics of Gate Threshold Voltage VGS(th) set precisely at 0.00V +0.01V, IDS = +20µA @ VDS = 0.1V, with a typical offset voltage of only +0.001V (1mV). Built on a single monolithic chip, they also exhibit excellent temperature tracking characteristics. These precision devices are versatile as design com- ponents for a broad range of analog small signal applications such as basic building blocks for current mirrors, matching circuits, current sources, differen- tial amplifier input stages, transmission gates, and multiplexers. They also ex- cel in limited operating voltage applications, such as very low level voltage- clamps and nano-power normally-on circuits. In addition to precision matched-pair electrical characteristics, each individual EPAD MOSFET also exhibits well controlled manufacturing characteristics, en- abling the user to depend on tight design limits from different production batches. These devices are built for minimum offset voltage and differential thermal re- sponse, and they can be used for switching and amplifying applications in +0.1V to +10V (+0.05V to +5V) powered systems where low input bias current, low input capacitance, and fast switching speed are desired. At VGS > 0.00V, the device exhibits enhancement mode characteristics whereas at VGS < 0.00V the device operates in the subthreshold voltage region and exhibits conventional depletion mode characteristics, with well controlled turn-off and sub-threshold levels that operate the same as standard enhancement mode MOSFETs. The ALD212900A/ALD212900 features high input impedance (2.5 x 1010Ω) and high DC current gain (>108). A sample calculation of the DC current gain at a drain output current of 30mA and input current of 300pA at 25°C is 30mA/300pA = 100,000,000, which translates into a dynamic operating current range of about eight orders of magnitude. A series of four graphs titled “Forward Transfer Char- acteristics”, with the 2nd and 3rd sub-titled “expanded (subthreshold)” and “fur- ther expanded (subthreshold)”, and the 4th sub-titled “low voltage”, illustrates the wide dynamic operating range of these devices. Generally it is recommended that the V+ pin be connected to the most positive voltage and the V- and IC (internally-connected) pins to the most negative volt- age in the system. All other pins must have voltages within these voltage limits at all times. Standard ESD protection facilities and handling procedures for static sensitive devices are highly recommended when using these devices. PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR FEATURES & BENEFITS • Zero Threshold™ VGS(th) = 0.00V +0.01V • VOS (VGS(th) match) to 2mV/10mV max. • Sub-threshold voltage ( nano-power) operation • < 100mV min. operating voltage • < 1nA min. operating current • < 1nW min. operating power • > 100,000,000:1 operating current ranges • High transconductance and output conductance • Low RDS(ON) of 14Ω • Output current >50mA • Matched and tracked tempco • Tight lot-to-lot parametric control • Positive, zero, and negative VGS(th) tempco • Low input capacitance and leakage currents APPLICATIONS • Low overhead current mirrors and current sources • Zero Power Normally-On circuits • Energy harvesting circuits • Very low voltage analog and digital circuits • Zero power fail-safe circuits • Backup battery circuits & power failure detector • Extremely low level voltage-clamps • Extremely low level zero-crossing detector • Matched source followers and buffers • Precision current mirrors and current sources • Matched capacitive probes and sensor interfaces • Charge detectors and charge integrators • High gain differential amplifier input stage • Matched peak-detectors and level-shifters • Multiple Channel Sample-and-Hold switches • Precision Current multipliers • Discrete matched analog switches/multiplexers • Nanopower discrete voltage comparators ALD212900A/ALD212900 VGS(th)= +0.00V *IC pins are internally connected, connect to V- SAL, PAL PACKAGES PIN CONFIGURATION ALD212900 V- GN1 DN1 S12 DN2 GN2 1 2 3 6 7 8 4 5 M 1 M 2 V- V- V- IC* V+ ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) *Contact factory for industrial temp. range or user-specified threshold voltage values. Operating Temperature Range * 0°C to +70°C 8-Pin SOIC Package 8-Pin Plastic Dip Package ALD212900ASAL ALD212900APAL ALD212900SAL ALD212900PAL |
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