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NTE265 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE265
Description  Silicon NPN Transistor Darlington Power Amplifier
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE265 Datasheet(HTML) 2 Page - NTE Electronics

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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Current Transfer Ratio
hFE
IC = 200mA, VCE = 5V
10k
60k
hfe
IC = 20mA, VCE = 5V, f = 1kHz
10k
Collector–to–Emitter Voltage
VCEO
IC = 10mA
50
V
Collector Saturation Voltage
VCE(sat) IC = 500mA, IB = 0.5mA, Note 3
1.5
V
Base Saturation Voltage
VBE(sat) IC = 500mA, IB = 0.5mA, Note 3
2.0
V
Collector Cutoff Current
ICES
VCE = 50V, TJ = +25°C
0.5
µA
ICBO
VCE = 50V, TJ = +150°C
20
µA
Emitter Cutoff Current
IEBO
VEB = 13V
0.1
µA
Input Impedance
hie
IC = 20mA, VCE = 5V, f = 1kHz
50
500
Collector Capacitance
Ccbo
VCB = 10V, f = 1MHz
5
10
pF
Gain Bandwidth Product
fT
VCE = 5V, IC = 20mA
75
MHz
Delay Time and Rise Time
td + tr
IC = 1A, IB1 = 1mA
100
ns
Storage Time
ts
IC = 1A, IB1 = IB2 = 1mA
350
ns
Fall Time
tf
IC = 1A, IB1 = IB2 = 1mA
800
ns
Note 3. Pulsed measurement: Pulse Width = 300
µs, Duty Cycle ≤ 2%.
B
C
E
.070 (1.78) x 45
°
Chamf
.132 (3.35) Dia
.050 (1.27)
.325
(9.52)
.180 (4.57)
.380 (9.56)
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.400
(10.16)
Min
.100 (2.54)
.100 (2.54)
C
EB
C


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