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NTE2642 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2642
Description  Silicon NPN Transistor Horizontal Deflection Output High Speed Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2642 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2642
Silicon NPN Transistor
Horizontal Deflection Output
High Speed Switch
Features:
D High Breakdown Voltage
D High Reliability
D High Speed Switching
D Wide Area of Safe Operation (ASO)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
1700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCES
1700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous DC
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
TC = +25°C
65W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C
3.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 1000V, IE = 0
50
µA
VCB = 1700V, IE = 0
1
mA
Emitter Cutoff Current
IEBO
VEB = 7V, IC = 0
50
µA
DC Current Gain
hFE
VCE = 5V, IC = 8A
6
12
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 2A
3
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 8A, IB = 2A
1.5
V
Transition Frequency
fT
VCE = 10V, IC = 0.1A, f = 0.5MHz
3
MHz


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