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TLP666JF Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TLP666JF
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Triac
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP666JF Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TLP666JF
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo
−Triac
TLP666JF
Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
The TOSHIBA TLP666JF consists of a zero voltage crossing turn−on
photo−triac optically coupled to a gallium arsenide infrared emitting
diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP666J.
(both condition and limits)
· Peak off−state voltage: 600 V (min.)
· Trigger LED current: 10 mA (max.)
· On−state current: 100 mA (max.)
· UL recognized: UL1577, file No. E67349
· Isolation voltage: 5000 Vrms (min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 08.87,
Certificate No. 68383
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
(Note 1) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
· Structural parameter
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Insulation thickness: 0.5mm (min.)
· Conforming safety standards:
DIN 57 804 / VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
Pin Configurations (top view)
1 : Anode
2 : Cathode
3 : NC
4 : Terminal 1
6 : Terminal 2
1
2
3
ZC
6
4
Unit in mm
TOSHIBA
11−9A202
Weight: 0.44g


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