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TLP666J Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP666J Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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TLP666J 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≤ 53°C) ∆IF / °C -0.7 mA / °C Peak forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Off -state ontput terminal voltage VDRM 600 V Ta = 25°C 100 On -state RMS Current Ta = 70°C IT(RMS) 50 mA On -state current derating (Ta ≥ 25°C) ∆IT / °C -1.1 mA / °C Peak on -state current (100µs pulse, 120pps) ITP 2 A Peak nonrepetitive surge current (PW = 10ms, DC = 10%) ITSM 1.2 A Junction temperature Tj 115 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -40~100 °C Lead soldering temperature (10s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note 2) BVS 5000 Vrms (Note 2) Pins 1, 2 and 3 shorted together pin 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 240 Vac Forward current IF 15 20 25 mA Peak on -stage current ITP ― ― 1 A Operating temperature Topr -25 ― 85 °C |
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