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TLP141G Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP141G Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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TLP141G 2002-09-25 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 µA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Ta = 25°C ― 10 5000 nA Off -state current IDRM VAK = 400 V RGK = 27 kΩ Ta = 100°C ― 1 100 µA Ta = 25°C ― 10 5000 nA Reverse current IRRM VKA = 70 mA RGK = 27 kΩ Ta = 100°C ― 1 100 µA On -state voltage VTM ITM = 100 mA ― 0.9 1.3 V Holding current IH RGK = 27 kΩ ― 0.2 1 mA Off -state dv / dt dv/dt VAK = 280 V, RGK = 27 kΩ 5 10 ― V / µs Anode to gate ― 20 ― Capacitance Cj V = 0, f = 1 MHz Gate to cathode ― 350 ― pF Coupled Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VAK = 6 V, RGK = 27kΩ ― 4 10 mA Turn -on time ton IF = 50mA, RGK = 27kΩ ― 10 ― µs Coupled dv / dt dv/dt VS = 500 V, RGK = 27kΩ 500 ― ― V / µs Capacitance (input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×10 10 10 14 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 5000 ― Vdc |
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