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TLP141G Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP141G Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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TLP141G 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ∆IF/°C -0.7 mA / °C Peak forward current (100 µs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Peak forward voltage(RGK = 27kΩ) VDRM 400 V Peak reverse voltage(RGK = 27kΩ) VDRM 400 V On -state current IT(RMS) 150 mA On -state current derating (Ta ≥ 25°C) ∆IT / °C -2.0 mA / °C Peak one cycle surge current ITSM 2 A Peak reverse gate voltage VGM 5 V Junction temperature Tj 100 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min., RH ≤ 60%) (Note 1) BVS 2500 Vrms (Note 1) Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 120 Vac Forward current IF 15 20 25 mA Operating temperature Topr -25 ― 85 °C Gate to cathode resistance RGK ― 27 33 kΩ Gate to cathode capacitance CGK ― 0.01 0.1 µF |
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