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TC581282AXB Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TC581282AXB Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 31 page TC581282AXB 2001-12-04 2/31 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS SYMBOL RATING VALUE UNIT VCC Power Supply Voltage −0.6 to 4.6 V VIN Input Voltage −0.6 to 4.6 V VI/O Input/Output Voltage −0.6 V to VCC + 0.3 V (≤ 4.6 V) V PD Power Dissipation 0.3 W Tsolder Soldering Temperature (10s) 260 °C Tstg Storage Temperature −55 to 125 °C Topr Operating Temperature −40 to 85 °C CAPACITANCE *(Ta ==== 25°C, f ==== 1 MHz) SYMB0L PARAMETER CONDITION MIN MAX UNIT CIN Input VIN = 0 V 10 pF COUT Output VOUT = 0 V 10 pF * This parameter is periodically sampled and is not tested for every device. I/O Control circuit Status register Address register Command register Column buffer Column decoder Data register Sense amp Memory cell array Control HV generator Logic control BY / RY VCC I/O1 VSS I/O8 to WP CE CLE ALE WE RE BY / RY |
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