DMP2038USS

Document number: DS36919 Rev. 3 - 3

2 of 6

www.diodes.com

November 2017

© Diodes Incorporated

DMP2038USS

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

8

V

Drain Current (Note 6)

Steady State

-6.5

-5.2

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

-25

A

Maximum Continuous Body Diode Forward Current (Note 6)

2

A

Avalanche Current (Note 7) L=0.3mH

13.2

A

Avalanche Energy (Note 7) L=0.3mH

26

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

2.5

W

Thermal Resistance, Junction to Ambient (Note 6)

50

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

-20





V

Zero Gate Voltage Drain Current





-1

µA

Gate-Source Leakage





100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

-0.4



-1.1

V

Static Drain-Source On-Resistance



24

38

m





33

56

Diode Forward Voltage



-0.7

-1.2

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance



1496



pF

f = 1.0MHz

Output Capacitance



130



pF

Reverse Transfer Capacitance



116



pF

Total Gate Charge



14.4



nC

Gate-Source Charge



2.6



Gate-Drain Charge



2.7



Turn-On Delay Time



13.7



ns

Turn-On Rise Time



14.0



Turn-Off Delay Time



79.1



Turn-Off Fall Time



35.5



Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

NOT RECOMMENDED FOR NEW DESIGN

USE DMP2040USS