DMP2035U-7 datasheet(4/7 Pages) DIODES

Part #	DMP2035U-7

Description	P-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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4 / 7 page

DMP2035U

Document number: DS31830 Rev. 9 - 2

4 of 7

www.diodes.com

February 2018

DMP2035U

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (癈 )

A

0

0.2

0.4

0.6

0.8

1.2

1.0

I = -250礎

D

I = -1mA

D

100

1,000

10,000

0

2

4

6

8

10

12

14

16

18 20

Fig. 9 Typical Total Capacitance

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

Ciss

Crss

C

oss

0

2

4

6

8

10

12

14

16

18

20

0

0.3

0.6

0.9

1.2

1.5

Fig. 8 Diode Forward Voltage vs. Current

-V

, SOURCE-DRAIN VOLTAGE (V)

SD

-I

,

S

O

U

R

C

E

C

U

R

E

N

T

(

A

)

S

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

2

4

6

8

10

12

14

16

18

20

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-I

,

L

E

A

K

A

G

E

C

U

R

E

N

T

(

n

A

)

D

S

10

100

1,000

10,000

1

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

1

2

3

4

5

6

7

8

-V

, GATE-SOURCE VOLTAGE (V)

Fig. 11 Gate-Source Leakage Current vs. Voltage

GS

-I

,

L

E

A

K

A

G

E

C

U

R

E

N

T

(

n

A

)

G

S

10,000

1,000

100

10

0.1

1

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

ID= -250A

(°C)

1

2

3

4

5

6

7

8

VGSR, REVERSE GATE-SOURCE VOLTAGE (V)

Fig. 12 Reverse Gate-Source Leakage Current vs. Voltage

-I

,

L

E

A

K

A

G

E

C

U

R

E

N

T

(

n

A

)

G

S

10,000

1,000

100

10

0.1

1

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

-VGSR, REVERSE GATE-SOURCE VOLTAGE (V)

Fig. 12 Reverse Gate-Source Leakage Current vs. Voltage

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