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DMP2005UFG-13 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMP2005UFG-13
Description  20V P-CHANNEL ENHANCEMENT MODE MOSFET
Download  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2005UFG-13 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMP2005UFG
Document number: DS38932 Rev. 2 - 2
4 of 7
www.diodes.com
November 2016
© Diodes Incorporated
DMP2005UFG
0
0.002
0.004
0.006
0.008
0.01
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
V
= -4.5V
GS
I = -15.0A
D
V
= -2.5V
GS
I = -10.0A
D
0
0.2
0.4
0.6
0.8
1
1.2
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
Figure 8 Gate Threshold Variation vs. Junction Temperature
I = -1mA
D
I = -250µA
D
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
100
1000
10000
0
5
10
15
20
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
RDS(on)
Limited
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
P
= 100µs
W
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Area
T
= 150°C
J (m ax )
T = 25°C
C
V
= -4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0
2
4
6
8
10
0
20
40
60
80
100
120
140
V
= -10V
DS
I = -20A
D
V
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
Q , TOTAL GATE CHARGE (nC)
g
Figure 11 Gate Charge


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