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SSM3K01T Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. SSM3K01T
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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SSM3K01T Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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SSM3K01T
2002-01-24
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
· Small Package
· Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V)
: Ron = 150 mΩ (max) (@VGS = 2.5 V)
· Low Gate Threshold Voltage: Vth = 0.6~1.1 V
(@VDS = 3 V, ID = 0.1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±10
V
DC
ID
3.2
Drain current
Pulse
IDP
(Note2)
6.4
A
Drain power dissipation (Ta
= 25°C)
PD
(Note1)
1250
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note1: Mounted on FR4 board
(25.4 mm
´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm
2
, t
= 10 s)
Note2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)


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