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NTE2591 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE2591
Description  Silicon NPN Transistor High Voltage Amp/Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE2591 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE2591
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D High Breakdown Voltage, High Reliability
D Low Output Capacitance
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
2000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
900V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
20mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
1.2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 900V, IE = 0
1.0
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
1.0
µA
DC Current Gain
hFE
VCE = 5V, IC =1mA
20
50
120
Gain–Bandwidth Product
fT
VCE = 10V, IC = 1mA
6
MHz
Output Capacitance
Cob
VCB = 100V, f = 1MHz
1.6
pF
Collector Emitter Saturation Voltage
VCE(sat)
IC = 2mA, IB = 400µA
5
V
Base Emitter Saturation Voltage
VBE(sat)
IC =2mA, IB = 400µA
2
V
Collector Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
2000
V
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
900
V
Emitter Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
5
V


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