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TPS254900A-Q1 Datasheet(PDF) 7 Page - Texas Instruments

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Part No. TPS254900A-Q1
Description  Automotive USB Host Charger With Short-to-VBATT Protection
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TPS254900A-Q1 Datasheet(HTML) 7 Page - Texas Instruments

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TPS254900A-Q1
www.ti.com
SLUSCU5A – NOVEMBER 2017 – REVISED JANUARY 2018
Product Folder Links: TPS254900A-Q1
Submit Documentation Feedback
Copyright © 2017–2018, Texas Instruments Incorporated
Electrical Characteristics (continued)
Unless otherwise noted, –40°C
≤ TJ ≤ 125°C and 4.5 V ≤ V(IN) ≤ 6.5 V, V(EN) = V(CTL1) = V(CTL2) = V(IN), R(FAULT) = R(STATUS) =
10 kΩ, R(IMON) = 2.55 kΩ, R(ILIM_HI) = 19.1 kΩ, R(ILIM_LO) = 80.6 kΩ. Positive currents are into pins. Typical values are at 25°C.
All voltages are with respect to GND.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(4)
This parameter is provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's
product warranty.
CURRENT MONITOR OUTPUT (IMON)
I(IMON)
Source current
Load = 3.2 A, 0
≤ V(IMON) ≤ 2.5 V
306
333
359
µA
Load = 3 A, 0
≤ V(IMON) ≤ 2.5 V
287
312
337
Load = 2.4 A, 0
≤ V(IMON) ≤ 2.5 V
230
250
270
Load = 2.1 A, 0
≤ V(IMON) ≤ 2.5 V
201
218
235
Load = 1 A, 0
≤ V(IMON) ≤ 2.5 V
94
104
114
Load = 0.5 A, 0
≤ V(IMON) ≤ 2.5 V
44
52
60
HIGH-BANDWIDTH ANALOG SWITCH
R(HS_ON)
DP and DM switch on-
resistance
V(DP_OUT) = V(DM_OUT) = 0 V, I(DP_IN) = I(DM_IN) =
30 mA
3.2
6.5
Ω
V(DP_OUT) = V(DM_OUT) = 2.4 V, I(DP_IN) = I(DM_IN) =
–15 mA
3.8
7.6
|ΔR(HS_ON)|
Switch resistance mismatch
between DP and DM
channels
V(DP_OUT) = V(DM_OUT) = 0 V, I(DP_IN) = I(DM_IN) =
30 mA
0.05
0.15
Ω
V(DP_OUT) = V(DM_OUT) = 2.4 V, I(DP_IN) = I(DM_IN) =
–15 mA
0.05
0.15
C(IO_OFF)
DP and DM switch off-state
capacitance(4)
VEN = 0 V, V(DP_IN) = V(DM_IN) = 0.3 V, Vac = 0.03
VPP, f = 1 MHz
8.8
pF
C(IO_ON)
DP and DM switch on-state
capacitance(4)
V(DP_IN) = V(DM_IN) = 0.3 V, Vac = 0.03 VPP, f = 1
MHz
10.9
pF
Off-state isolation(3)
V(EN) = 0 V, f = 250 MHz
8
dB
On-state cross-channel
isolation(4)
f = 250 MHz
30
dB
Ilkg(OFF)
Off-state leakage current
VEN = 0 V, V(DP_IN) = V (DM_IN) = 3.6 V, V(DP_OUT)
= V(DM_OUT) = 0 V, measure I(DP_OUT) and
I(DM_OUT)
0.1
1.5
µA
BW
Bandwidth (–3 dB)(4)
R(L) = 50 Ω
940
MHz
CHARGING DOWNSTREAM PORT DETECT
V(DM_SRC)
DM_IN CDP output voltage
V(DP_IN) = 0.6 V, –250 µA < I(DM_IN) < 0 µA
0.5
0.6
0.7
V
V(DAT_REF)
DP_IN rising lower window
threshold for V(DM_SRC)
activation
0.36
0.4
V
Hysteresis(4)
50
mV
V(LGC_SRC)
DP_IN rising upper window
threshold for VDM_SRC
de-activation
0.8
0.88
V
V(LGC_SRC_HYS)
Hysteresis(4)
100
mV
I(DP_SINK)
DP_IN sink current
V(DP_IN) = 0.6 V
40
75
100
µA


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