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TPS254900A-Q1 Datasheet(PDF) 19 Page - Texas Instruments

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Part No. TPS254900A-Q1
Description  Automotive USB Host Charger With Short-to-VBATT Protection
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TPS254900A-Q1 Datasheet(HTML) 19 Page - Texas Instruments

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(OUT)
(FB)
(G)
(FA )
(FB)
(G)
V
R
R
R
V
/ R
=
-
-
FA
DS(on)
(WIRE)
(CS)
R
(r
R
) / G
=
+
IN
OUT
CS
R1
R3
To Regulator OUT
To Load
To Regulator
Resistor Divider
V
(OUT)
R
(FA)
R
(G)
R
(FB)
FB
C
(BUS)
R
(WIRE)
R
(LOAD)
C
(COMP)
r
DS(on)
R2
19
TPS254900A-Q1
www.ti.com
SLUSCU5A – NOVEMBER 2017 – REVISED JANUARY 2018
Product Folder Links: TPS254900A-Q1
Submit Documentation Feedback
Copyright © 2017–2018, Texas Instruments Incorporated
Figure 38. Cable Compensation Equivalent Circuit
8.3.2.1 Design Procedure
To start the procedure, the total resistance, including the power switch rDS(on) and wire resistance R(WIRE), must
be known.
1. Choose R(G) following the voltage-regulator feedback resistor-divider design guideline.
2. Calculate R(FA) according to Equation 1.
(1)
3. Calculate R(FB) according to Equation 2.
(2)
4. C(COMP) in parallel with R(FA) is required to stablilize V(OUT) when C(BUS) is large. Start with C(COMP) ≥ 3 × G(CS)
× C(OUT), then adjust C(COMP) to optimize the load transient of the voltage regulator output. V(OUT) stability
should always be verified in the end application circuit.
8.3.3 D+ and D– Protection
D+ and D– protection consists of ESD and OVP (overvoltage protection). The DP_IN and DM_IN pins provide
ESD protection up to ±15 kV (air discharge) and ±8 kV (contact discharge) per IEC 61000-4-2 (see the ESD
Ratings section for test conditions).
The ESD stress seen at DP_IN and DM_IN is impacted by many external factors, like the parasitic resistance
and inductance between ESD test points and the DP_IN and DM_IN pins. For air discharge, the temperature and
humidity of the environment can cause some difference, so the IEC performance should always be verified in the
end-application circuit.
The IEC ESD performance of the TPS254900A-Q1 device depends on the capacitance connected from BIAS to
GND. A 2.2-µF capacitor placed close to the BIAS pin is recommended. Connect the BIAS pin to OUT using a
5.1-kΩ resistor as a discharge path for the ESD stress.
OVP protection is provided for short-to-VBUS or short-to-battery conditions in the vehicle harness, preventing
damage to the upstream USB transceiver or hub. When the voltage on DP_IN or DM_IN exceeds 3.9 V (typical),
the TPS254900A-Q1 device quickly responds to block the high-voltage reverse connection to DP_OUT and
DM_OUT. Overcurrent short-to-GND protection for D+ and D– is provided by the upstream USB transceiver.
8.3.4 VBUS OVP Protection
The TPS254900A-Q1 OUT pin can withstand up to 18 V. The internal MOSFET turns off quickly when a short-to-
battery condition occurs.


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