RN1965FE datasheet(2/4 Pages) TOSHIBA

Part #	RN1965FE

Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

RN1961FE~RN1966FE

2002-01-29

2

Electrical Characteristics (Ta

==== 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = 50 V, IE = 0

¾

100

Collector cut-off current

RN1961FE~1966FE

ICEO

VCE = 50 V, IB = 0

¾

500

nA

RN1961FE

0.82

¾

1.52

RN1962FE

0.38

¾

0.71

RN1963FE

0.17

¾

0.33

RN1964FE

VEB = 10 V, IC = 0

0.082

¾

0.15

RN1965FE

0.078

¾

0.145

Emitter cut-off current

RN1966FE

IEBO

VEB = 5 V, IC = 0

0.074

¾

0.138

mA

RN1961FE

30

¾

RN1962FE

50

¾

RN1963FE

70

¾

RN1964FE

80

¾

RN1965FE

80

¾

DC current gain

RN1966FE

hFE

VCE = 5 V, IC = 10 mA

80

¾

Collector-emitter

saturation voltage

RN1961FE~1966FE

VCE (sat)

IC = 5 mA,

IB = 0.25 mA

¾

0.1

0.3

V

RN1961FE

1.1

¾

2.0

RN1962FE

1.2

¾

2.4

RN1963FE

1.3

¾

3.0

RN1964FE

1.5

¾

5.0

RN1965FE

0.6

¾

1.1

Input voltage (ON)

RN1966FE

VI (ON)

VCE = 0.2 V, IC = 5 mA

0.7

¾

1.3

V

RN1961FE~1964FE

1.0

¾

1.5

Input voltage (OFF)

RN1965FE, 1966FE

VI (OFF)

VCE = 5 V, IC = 0.1 mA

0.5

¾

0.8

V

Transition frequency

RN1961FE~1966FE

fT

VCE = 10 V, IC = 5 mA

¾

250

¾

MHz

Collector output

capacitance

RN1961FE~1966FE

Cob

VCB = 10 V, IE = 0,

f

= 1 MHz

¾

3

6

pF

RN1961FE

3.29

4.7

6.11

RN1962FE

7

10

13

RN1963FE

15.4

22

28.6

RN1964FE

32.9

47

61.1

RN1965FE

1.54

2.2

2.86

Input resistor

RN1966FE

R1

¾

3.29

4.7

6.11

k

W

RN1961FE~1964FE

0.9

1.0

1.1

RN1965FE

0.0421 0.0468 0.0515

Resistor ratio

RN1966FE

R1/R2

¾

0.09

0.1

0.11

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