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FDMF6705 Datasheet(PDF) 17 Page - ON Semiconductor

Part No. FDMF6705
Description  Extra-Small, High-Performance, High-Frequency DrMOS Module
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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FDMF6705 Datasheet(HTML) 17 Page - ON Semiconductor

 
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© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDMF6705 • Rev. 1.0.4
16
PCB Layout Guidelines
Figure 30 provides an example of a proper layout for the
FDMF6705 and critical components. All of the high-
current paths, such as VIN, VSWH, VOUT, and GND
copper, should be short and wide for low inductance
and resistance. This technique aids in achieving a more
stable and evenly distributed current flow, along with
enhanced heat radiation and system performance.
The following guidelines are recommendations for the
PCB designer:
1. Input ceramic bypass capacitors must be placed
close to the VIN and PGND pins. This helps
reduce the high-current power loop inductance
and the input current ripple induced by the power
MOSFET switching operation.
2. The VSWH copper trace serves two purposes. In
addition to being the high-frequency current path
from the DrMOS package to the output inductor, it
also serves as a heat sink for the low-side
MOSFET in the DrMOS package. The trace
should be short and wide enough to present a low-
impedance path for the high-frequency, high-
current flow between the DrMOS and inductor to
minimize losses and temperature rise. Note that
the VSWH node is a high voltage and high-
frequency
switching
node
with
high
noise
potential. Care should be taken to minimize
coupling to adjacent traces. Since this copper
trace also acts as a heat sink for the lower FET,
balance using the largest area possible to improve
DrMOS cooling while maintaining acceptable
noise emission.
3. An output inductor should be located close to the
FDMF6705 to minimize the power loss due to the
VSWH copper trace. Care should also be taken so
the inductor dissipation does not heat the DrMOS.
4. PowerTrench® MOSFETs are used in the output
stage. The Power MOSFETs are effective at
minimizing ringing due to fast switching. In most
cases, no VSWH snubber is required. If a snubber
is used, it should be placed close to the VSWH and
PGND pins. The resistor and capacitor need to be
of proper size for the power dissipation.
5. VCIN, VDRV, and BOOT capacitors should be
placed as close as possible to the VCIN to CGND,
VDRV to CGND, and BOOT to PHASE pins to
ensure clean and stable power. Routing width and
length should be considered as well.
6. Include a trace from PHASE to VSWH to improve
noise margin. Keep the trace as short as possible.
7. The layout should include a placeholder to insert a
small-value series boot resistor (RBOOT) between
the boot capacitor (CBOOT) and DrMOS BOOT pin.
The BOOT-to-VSWH loop size, including RBOOT
and CBOOT, should be as small as possible. The
boot resistor may be required when operating near
the maximum rated VIN. The boot resistor is
effective at controlling the high-side MOSFET turn-
on slew rate and VSHW overshoot. RBOOT can
improve noise operating margin in synchronous
buck designs that may have noise issues due to
ground bounce or high positive and negative
VSWH
ringing.
However,
inserting
a
boot
resistance lowers the DrMOS efficiency. Efficiency
versus noise trade-offs must be considered. RBOOT
values from 0.5 Ω to 3.0 Ω are typically effective in
reducing VSWH overshoot for the FDMF6705.
The VIN and PGND pins handle large current
transients with frequency components greater than
100MHz. If possible, these pins should be
connected directly to the VIN and board GND
planes. The use of thermal relief traces in series
with these pins is discouraged since this adds
inductance to the power path. This added
inductance in series with either the VIN or PGND
pin degrades system noise immunity by increasing
positive and negative VSWH ringing.
8. CGND pad and PGND pins should be connected to
the GND plane copper with multiple vias for stable
grounding. Poor grounding can create a noise
transient offset voltage level between CGND and
PGND. This could lead to faulty operation of the
gate driver and MOSFETs.
9. Ringing at the BOOT pin is most effectively
controlled by close placement of the boot
capacitor. Do not add an additional BOOT to the
PGND capacitor. This may lead to excess current
flow through the BOOT diode.
10. The SMOD# and DISB# pins have weak internal
pull-up
and
pull-down
current
sources,
respectively. These pins should not have any
noise filter capacitors. Do not to float these pins
unless absolutely necessary.
11. Use multiple vias on each copper area to
interconnect top, inner, and bottom layers to help
distribute current flow and heat conduction. Vias
should be relatively large and of reasonably low
inductance. Critical high-frequency components,
such as RBOOT, CBOOT, the RC snubber, and
bypass capacitors should be located as close to
the respective DrMOS module pins as possible
on the top layer of the PCB. If this is not feasible,
they should be connected from the backside
through a network of low-inductance vias.


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