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FDMF6705 Datasheet(PDF) 7 Page - ON Semiconductor

Part No. FDMF6705
Description  Extra-Small, High-Performance, High-Frequency DrMOS Module
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMF6705 Datasheet(HTML) 7 Page - ON Semiconductor

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© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDMF6705 • Rev. 1.0.4
6
Electrical Characteristics
Typical values are VIN = 12 V, VCIN = 5 V, VDRV = 5 V, and TA = +25°C unless otherwise noted.
Symbol
Parameter
Condition
Min. Typ.
Max.
Unit
Thermal Warning Flag
TACT
Activation Temperature
150
°C
TRST
Reset Temperature
135
°C
RTHWN
Pull-Down Resistance
IPLD=5 mA
30
250 ns Timeout Circuit
tD_TIMEOUT Timeout Delay
SW=0 V, Delay Between GH from HIGH to
LOW and GL from LOW to HIGH
250
ns
High-Side Driver
RSOURCE_GH Output Impedance, Sourcing Source Current=100 mA
1
RSINK_GH
Output Impedance, Sinking
Sink Current=100 mA
0.8
tR_GH
Rise Time
GH=10% to 90%, CLOAD=1.1 nF
6
ns
tF_GH
Fall Time
GH=90% to 10%, CLOAD=1.1 nF
5
ns
tD_DEADON
LS to HS Deadband Time
GL going LOW to GH going HIGH,
1 V GL to 10% GH
10
ns
tPD_PLGHL
PWM LOW Propagation
Delay
PWM going LOW to GH going LOW,
VIL_PWM to 90% GH
16
30
ns
tPD_PHGHH
PWM HIGH Propagation
Delay (SMOD Held LOW)
PWM going HIGH to GH going HIGH,
VIH_PWM to 10% GH (SMOD=LOW)
30
ns
tPD_TSGHH
Exiting 3-State Propagation
Delay
PWM (from 3-State) going HIGH to GH
going HIGH, VIH_PWM to 10% GH
30
ns
Low-Side Driver
RSOURCE_GL Output Impedance, Sourcing Source Current=100 mA
1
RSINK_GL
Output Impedance, Sinking
Sink Current=100 mA
0.5
tR_GL
Rise Time
GL=10% to 90%, CLOAD=2.7 nF
10
ns
tF_GL
Fall Time
GL=90% to 10%, CLOAD=2.7 nF
8
ns
tD_DEADOFF HS to LS Deadband Time
SW going LOW to GL going HIGH,
2.2 V SW to 10% GL
12
ns
tPD_PHGLL
PWM-HIGH Propagation
Delay
PWM going HIGH to GL going LOW,
VIH_PWM to 90% GL
9
25
ns
tPD_TSGLH
Exiting 3-State Propagation
Delay
PWM (from 3-State) going LOW to GL
going HIGH, VIL_PWM to 10% GL
20
ns
Boot Diode
VF
Forward-Voltage Drop
IF=10 mA
0.35
V
VR
Breakdown Voltage
IR=1 mA
22
V


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