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SPW35N60CFD Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # SPW35N60CFD
Description  N-Channel MOSFET Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

SPW35N60CFD Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
SPW35N60CFD
ISPW35N60CFD
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=1.9mA
3
5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=21.6A
118
mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
0.1
μ
A
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
4
μ
A
VSD
Diode forward voltage
IF=34.1A, VGS = 0V
1.2
V


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