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DMP1012UFDF-13 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMP1012UFDF-13
Description  12V P-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP1012UFDF-13 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMP1012UFDF
Datasheet number: DS37039 Rev. 2 - 2
4 of 7
www.diodes.com
January 2018
© Diodes Incorporated
DMP1012UFDF
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = -2.5V, ID = -4A
V
GS = -4.5V, ID = -5A
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
A = 125
oC
T
A = 85
oC
T
A = 25
oC
T
A = -55
oC
V
GS = 0V
T
A = 150
oC
100
1000
10000
0
2
4
6
8
10
12
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
0
10
20
30
Q
g (nC)
Figure 11. Gate Charge
V
DS = -6V, ID = -10A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10s
P
W =10ms
P
W =100µs
DC
R
DS(ON) Limited
P
W =1ms
P
W =100ms
T
J(Max) = 150℃
T
C = 25℃
Single Pulse
DUT on 1*MRP Board
V
GS= -4.5V
P
W =1s
0
0.2
0.4
0.6
0.8
1
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junciton
Temperature
I
D = -250μA
I
D = -1mA


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