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IXTH50P10 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXTH50P10
Description  Standard Power MOSFET
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Maker  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH50P10 Datasheet(HTML) 1 Page - IXYS Corporation

  IXTH50P10 Datasheet HTML 1Page - IXYS Corporation IXTH50P10 Datasheet HTML 2Page - IXYS Corporation  
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© 2002 IXYS All rights reserved
TO-247 AD
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
-100
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
-100
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C
-50
A
I
DM
T
C
= 25
°C, pulse width limited by T
J
-200
A
I
AR
T
C
= 25
°C
-50
A
E
AR
T
C
= 25
°C30
mJ
P
D
T
C
= 25
°C
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = -250 µA
-100
V
V
GS(th)
V
DS = VGS, ID = -250 µA
-3.0
-5.0
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±100
nA
I
DSS
V
DS = 0.8
V
DSS
T
J =
25
°C
-25
µA
V
GS = 0 V
T
J = 125 ° C-1
mA
R
DS(on)
V
GS = -10 V, ID =
0.5 I
D25
55
m
Features
Internationalstandardpackage
JEDEC TO-247 AD
Low R
DS (on) HDMOS
TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
98905 (2/02)
P-Channel Enhancement Mode
Avalanche Rated
Standard Power MOSFET
IXTH 50P10
Advance Technical Information
V
DSS
= -100
V
I
D25
= -50
A
R
DS(on)
=
55 m


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