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ISL6209CBZ Datasheet(PDF) 8 Page - Intersil Corporation |
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ISL6209CBZ Datasheet(HTML) 8 Page - Intersil Corporation |
8 / 10 page 8 Power Dissipation Package power dissipation is mainly a function of the switching frequency and total gate charge of the selected MOSFETs. Calculating the power dissipation in the driver for a desired application is critical to ensuring safe operation. Exceeding the maximum allowable power dissipation level will push the IC beyond the maximum recommended operating junction temperature of 125°C. The maximum allowable IC power dissipation for the SO-8 package is approximately 800mW. When designing the driver into an application, it is recommended that the following calculation be performed to ensure safe operation at the desired frequency for the selected MOSFETs. The power dissipated by the driver is approximated as: where fsw is the switching frequency of the PWM signal. VU and VL represent the upper and lower gate rail voltage. QU and QL is the upper and lower gate charge determined by MOSFET selection and any external capacitance added to the gate pins. The IVCC VCC product is the quiescent power of the driver and is typically negligible. Pfsw 1.5VUQU VLQL + () I VCCVCC + = FIGURE 7. POWER DISSIPATION vs FREQUENCY FREQUENCY (kHz) 1000 900 800 700 600 500 400 300 200 100 0 0 200 400 600 800 1000 1200 1600 1400 1800 2000 QU =100nC QL= 200nC QU=50nC QL=100nC QU=20nC QL=50nC QU=50nC QL=50nC ISL6209 |
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